STMICROELECTRONICS STP4N150 Power MOSFET, N Channel, 4 A, 1.5 kV, 5 ohm, 30 V, 4 V E-Films EF-1201 000 counts resolution

000 counts resolution

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STMICROELECTRONICS STP4N150 Power MOSFET, N Channel, 4 A, 1.5 kV, 5 ohm, 30 V, 4 V E-Films EF-1201 000 counts resolutionThe STP4N150 is a 1500V N channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate charge and switching characteristics. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements. 100% Avalanche tested Intrinsic capacitances and Qg minimized